features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or techni- cal support, contact rfmd at (+1) 336-678-5570 or sales-sup- rf mems SBB-4000 0.05ghz to 6ghz, cascadable active bias ingap hbt mmic amplifier rfmd?s SBB-4000 is a high performance ingap hbt mmic amplifier utilizing a dar- lington configuration with an active bias network. the active bias network provides stable current over temperature and proce ss beta variations. its efficient operation from a single 5v supply and its compact size (0.59mmx0.70mm) make it ideal for high density multi-chip module applications . it is well-suited for high linearity 5v gain block applications and it is internally matched to 50 . rfmd can provide 100% dc screening, visual inspection, and hi rel water qualifi- cation. die can be delivered at the wafer level or picked to gel or waffle paks. gain and return loss versus frequency v s =5v, i s =82ma -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) gain and return loss (db) irl gain orl gsg probe data with bias tees zs=zl=50 ohms, t=25c oip3=36.5dbm @ 2000mhz p1db=19.5dbm @ 2000mhz single fixed 5v supply compact die size (0.59mmx0.7mm) patented thermal design & bias circuit low thermal resistance applications pa driver amplifier rf pre-driver and rf receive path military communications test and instrumentation eds-106101 rev a preliminary package: bare die SBB-4000 0.05ghz to 6ghz, cascad- able active bias ingap hbt mmic amplifier parameter specification unit condition min. typ. max. frequency of operation 50 6000 mhz small signal gain 15.5 db frequency=500mhz 16.0 db frequency=2000mhz 17.0 db frequency=4000mhz output power at 1db compression 20.0 dbm frequency=500mhz 19.5 dbm frequency=2000mhz 17.5 dbm frequency=4000mhz output third order intercept point 41.5 dbm frequency=500mhz 36.5 dbm frequency=2000mhz 29.0 dbm frequency=4000mhz input return loss 20.5 db frequency=2000mhz output return loss 15.0 db frequency=2000mhz current 82.0 ma noise figure 4.2 db frequency=2000mhz thermal resistance 69.9 c/w junction to lead (89 pkg) test conditions: z 0 =50 , v d =5v, i d =82ma, t=25c, oip3 tone spacing=1mhz, p out /tone=0dbm. gsg probe data with bias tees.
2 of 6 preliminary eds-106101 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or techni- cal support, contact rfmd at (+1) 336-678-5570 or sales-sup- SBB-4000 typical performance (gsg probe data with bias tees) v d =5v, i d =82ma, t=25c, z=50 absolute maximum ratings parameter rating unit total current (i d )100ma device voltage (v d )5.5v power dissipation 0.55 w operating lead temperature (t l ) -40 to +85 c rf input power +12 (tbr)* dbm storage temperature range -55 to +150 c operating junction temperature (t j )+150 c esd rating - human body model (hbm) class 1c * tbr=to be reviewed operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l parameter units 500mhz 1000mhz 1500mhz 2000mhz 3000mhz 4000mhz small signal gain db 15.5 15.9 16.0 16.0 16.5 17.0 output 3rd order intercept point (see note 1) dbm 41.5 40.8 39.7 36.5 32.5 29.0 output power at 1db compression dbm 20.0 19.8 19.8 19.5 18.5 17.5 input return loss db 34.0 27.5 24.0 20.5 16.5 13.0 output return loss db 24.0 20.5 17.5 15.0 11.5 8.5 reverse isolation db 18.4 18.5 18.6 18.4 18.6 18.8 noise figure db 4.2 4.4 4.3 4.2 4.4 4.3 note 1: 0dbm/tone, 1mhz spacing caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 6 preliminary eds-106101 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or techni- cal support, contact rfmd at (+1) 336-678-5570 or sales-sup- SBB-4000 typical performance (gsg probe data with bias tees) v d =5.0v, i d =82ma p1db versus frequency 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) p1db (dbm) -20c 25c 85c oip3 vs. frequency (0dbm/tone, 1mhz spacing) 20.0 25.0 30.0 35.0 40.0 45.0 50.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) oip3 (dbm) -20c 25c 85c current versus voltage 65.0 75.0 85.0 95.0 105.0 4.8 4.9 5.0 5.1 5.2 5.3 v d (v) i d (ma) -20c 25c 85c noise figure versus frequency 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) noise figure (db) 25c 85c
4 of 6 preliminary eds-106101 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or techni- cal support, contact rfmd at (+1) 336-678-5570 or sales-sup- SBB-4000 typical performance (gsg probe data with bias tees) v d =5.0v, i d =82ma s11 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s11 (db) -20c 25c 85c s21 versus frequency 10.0 12.0 14.0 16.0 18.0 20.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s21 (db) -20c 25c 85c s12 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s12 (db) -20c 25c 85c s22 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s22 (db) -20c 25c 85c
5 of 6 preliminary eds-106101 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or techni- cal support, contact rfmd at (+1) 336-678-5570 or sales-sup- SBB-4000 notes: 1. all dimensions in inches [millimeters]. 2. die thickness is 0.004 [0.100]. 3. typical bond pad is 0.003x0.006 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside is ground. die dimensions pin function description rf in this pad is dc coupled and matched to 50 . an external dc block is required. rf out this pad is dc coupled and matched to 50 . dc bias is applied through this pad. die backside die backside must be connected to rf/dc ground using silver filled conductive epoxy.
6 of 6 preliminary eds-106101 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or techni- cal support, contact rfmd at (+1) 336-678-5570 or sales-sup- SBB-4000 device assembly ordering information part number description devices/container SBB-4000 bare die
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